Abstract
GaN phase is synthesized using systemic implantation of nitrogen ions of multiple energies (290, 130 and 50 keV) into Zn-doped GaAs (1 0 0) at room temperature and subsequent annealing at 850 °C for 30 min in Ar + H 2 atmosphere. The implanted doses of nitrogen ions are 5 × 10 16 and 1 × 10 17 ions-cm −2. Glancing angle X-ray diffraction studies show that hexagonal phase of GaN were formed. The photoluminescence studies show the emission from the band edge as well as from point defects.
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