Abstract
Gallium nitride (GaN) powders were synthesized from gallium oxyhydroxide (GaOOH· xH 2O) which was prepared from aqueous solution of gallium nitrate and urea. The process of conversion of gallium oxyhydroxide to gallium nitride under a flow of ammonia was monitored by XRD and 71Ga magic-angle spinning (MAS) NMR spectroscopy. Gallium oxyhydroxide turned into α-Ga 2O 3 and then GaN without the phase transformation from α- to β-Ga 2O 3. 71Ga MAS NMR and PL spectra revealed that a part of GaN powders obtained above 900 °C is nitrogen deficient. GaN nanowires were prepared from a mixture of aluminum oxyhydroxide and gallium oxyhydroxide. The nanowires were grown by sublimation of GaN confined by alumina.
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