Abstract
Gallium nitride (GaN) powders were synthesized from gallium oxyhydroxide (GaOOH· xH 2O) which was prepared from aqueous solution of gallium nitrate and urea. The process of conversion of gallium oxyhydroxide to gallium nitride under a flow of ammonia was monitored by XRD and 71Ga magic-angle spinning (MAS) NMR spectroscopy. Gallium oxyhydroxide turned into α-Ga 2O 3 and then GaN without the phase transformation from α- to β-Ga 2O 3. 71Ga MAS NMR and PL spectra revealed that a part of GaN powders obtained above 900 °C is nitrogen deficient. GaN nanowires were prepared from a mixture of aluminum oxyhydroxide and gallium oxyhydroxide. The nanowires were grown by sublimation of GaN confined by alumina.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.