Synthesis of gallium nitride films by a novel electrodeposition route

Abstract

Gallium nitride films were deposited onto SnO 2-coated glass substrates by an electrodeposition technique. A mixture of gallium nitrate, ammonium nitrate and water was utilized as electrolyte for the above. The applied voltage between the electrodes was ∼7 V for the deposition of gallium nitride films. The films were well crystallized with an average grain size of ∼0.2–0.4 μm. XRD studies indicated the presence of both c-GaN and h-GaN phases in the film. FTIR spectra showed the characteristic peak for gallium nitride at ∼541 cm −1 for all the samples.