Synthesis of Ga 2O 3 chains with closely spaced knots connected by nanowires

Abstract

Chains of closely spaced metal or semiconductor particles have potential applications in optoelectronics and single electron devices. We report, for the first time, the synthesis of Ga 2O 3 chains with closely spaced knots connected by nanowires using the thermal evaporation method with a specially designed quartz boat. The Ga 2O 3 chains grew only on the Si substrates where Au catalyst or Ga droplets were coated. The average diameter of the knots is about 450 nm and that of the nanowires is about 50 nm. The selected area electron diffraction of either a knot or a connecting nanowire includes two sets of overlapped single crystal electron diffraction patterns which belong to the [1 0 2] and [1 0 1 ̄ ] crystal zone axes of the monoclinic β-Ga 2O 3 phase, respectively. The knot and its neighbor nanowire have the common ( 2 ̄ 0 1) growth planes at their interface. A mechanism model for the Ga 2O 3 chains synthesis based on the vapor–liquid–solid mechanism is discussed.