Abstract
Al sputtered thin films were used as underlayers for the growth of Mn4N films at low substrate temperature Ts because fcc Mn4N and fcc Al have a relation of epitaxy. Mn4N crystallites were included in the films deposited at Ts as relatively low as 200°C. These films possessed apparent ferrimagnetism. Consequently, it has been found that (111) oriented Al underlayers are effective for epitaxial growth of Mn4N layers.
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