Abstract
We describe the technology of a thermoactivated process in the Te + H2 system, by which the dissociation of tellurium molecules in the gas phase is used to obtain structurally perfect epitaxial tellurium films. The epitaxial films were deposited onto freshly cleaved mica substrates at a growth velocity of 6 μm/h and were oriented with the (100)Te face parallel to the substrate plane.
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