Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

Abstract

The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and electron paramagnetic resonance (EPR) studies have shown that regions of two-dimensional Si layers are formed in epitaxial structures prepared by the deposition of one to three biatomic Si layers on the CaF2/Si(111) film surface at a temperature of 550°С. The Raman spectra of these structures exhibit a narrow peak at 418 cm–1, which is due to light scattering on vibrations of Si atoms in the plane of a two-dimensional Si layer intercalated with calcium. The EPR spectra of multilayer structures with regions of two-dimensional Si layers embedded in CaF2 demonstrate an isotropic signal with an asymmetric Dyson shape and the g-factor g = 1.9992 under illumination. Consequently, this signal can be attributed to photoinduced conduction electrons in extended two-dimensional Si islands. These results may be useful for understanding the mechanisms of the formation of two-dimensional materials on CaF2/Si(111) substrates.