Abstract
In this letter, we report the synthesis of epitaxial SnxGe1−x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.
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