Synthesis of Dy3+ co-doped Bi4Si3O12:Sm3+ phosphors with enhanced red-emitting properties

Abstract

Abstract [Bi 4 Si 3 O 12 :Sm 3+ , Dy 3+ ] samples were prepared by the chemical solution decomposition method. The effects of different Bi 3+ and Si 4+ ion ratio in solution, as well as calcination temperature, on the synthesis of Bi 4 Si 3 O 12 phosphor were investigated. The influence of co-doped Dy 3+ ions on the red emission performance of [Bi 4 Si 3 O 12 :Sm 3+ ] phosphors and the mechanism of interaction between Sm 3+ and Dy 3+ ions were examined. X-ray diffraction (XRD) and scanning electron microscopy (SEM) showed that pure phase Bi 4 Si 3 O 12 power sample with good morphology/structure was obtained at Bi 3+ :Si 4+ ion ratio of 1:2 and calcination temperature of 800 °C. The data also revealed that small amounts of rare earth ions in Bi 4 Si 3 O 12 did not greatly impact the crystal structure and particle morphology. Photoluminescence spectroscopy indicated that the emission peak of [Bi 4 Si 3 O 12 :Sm 3+ , Dy 3+ ] phosphors was similar to that of Bi 4 Si 3 O 12 :Sm 3+ . The peak was recorded at 606 nm and it was assigned to the 4 G 5/2 → 6 H 7/2 transition of Sm 3+ ions. The highest luminous performance of the phosphor was obtained at Sm 3+ and Dy 3+ ions doping concentrations of 4 mol% and 1 mol%, respectively. At λ ex = 387 nm and λ ex = 451 nm (Dy: 6 H 15/2 → 4 I 11/2 , 6 G 11/2 ), the emission spectra of [Bi 4 Si 3 O 12 :Sm 3+ , Dy 3+ ] phosphors depicted the characteristic peaks of Dy 3+ and Sm 3+ ions, indicating that energy could transferred from Dy 3+ to Sm 3+ and it promotes the luminescence of Sm 3+ .