Synthesis of Diamond Using Low Pressure Plasma Jet

Abstract

With the use of the forced constricted type plasma jet, the synthesis of diamond is attemped under low pressure, in order to realize large area deposition at a high rate. The effect of the ambient gas pressure on the deposition rate and deposition area of the film is studied. It is clarified that the deposition area is extended markedly with decreasing gas pressure. Furthermore, diamond films are successfully synthesized without the large decrease of the deposition rate, even at 5 Torr.