Abstract
Diamond films were deposited onto Si substrates by Pulsed Liquid Injection Chemical Vapor Deposition (PLICVD) by the flash evaporation of small micro-doses of acetone, ethanol and methanol into the evaporation zone, at 280 °C. The resulting vapor mixture is transported by a carrier gas into the high-temperature reaction chamber, where the diamonds nucleate and grow onto the substrate at 850 °C. The films, characterized by Raman spectroscopy and Scanning Electron Microscopy, show ball-shaped structures in the 200 to 500 nm range, as well as the characteristic Raman diamond band at 1332 cm − 1 . The effect of the experimental parameters is analyzed and discussed in terms of their crystallinity, composition, structure and morphology.
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