Abstract
CuInS2 semiconductor was synthesized from CuIn(OH)5 precursors via facile anion exchange in aqueous Na2S solution at room temperature. CuIn(OH)5 was prepared from copper and indium salts and NaOH by co‐precipitation in aqueous solution as a polycrystalline. The sulfide exchange reaction did not alter the copper to indium ratio. The reaction resulted in stoichiometric amounts of sulfur in the CuInS2 sample at room temperature. Fourier transform infrared spectra and ion chromatography were used to analyze the impurities, including chloride and nitrate in the prepared samples. CuInS2 showed a chalcopyrite crystal structure after annealing at 500°C under 4% hydrogen‐mixed argon atmosphere. The bandgap of the CuInS2 thin film device was estimated to be 1.46 eV.
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