Abstract
TaON and Ta 3N 5 thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600–800 °C temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
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