Abstract
Large-scale hexagonal boron nitride (h-BN) film has been recognized to be extremely attractive for various applications since it is found as the best dielectric substrate for graphene devices. Here we report the successful synthesis of few-layer continuous h-BN film on Cu-Ni alloy containing 30at.% Ni. The h-BN films show uniform contrast both in scanning electron microscopy and optical images. The thickness of h-BN films can be controlled by modifying the weight of the source precursor. Results obtained from various characterizations show that the h-BN film is in a high quality of lattice structure. The method will facilitate both fundamental research and future applications based on large-area high-quality h-BN films.
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