Synthesis of compound semiconducting materials and device applications : D. A. Stevenson and R. H. Bube. Stanford Univ. Center for Materials Res., California (1971), pp. 53. (1096–7203) AD-718878M CMR-71-4 DAHC-15-70-G-12SAR

Abstract

Abstract : The objective of this program is to improve the knowledge and state of the art concerning compound semiconducting materials with particular emphasis on their use in practical devices. The program consists of three principal sections: epitaxial crystal growth; device application; and fundamental materials studies. The epitaxial crystal growth section concerns the preparation of material suitable for the device applications. The major emphasis in device application is on microwave and acoustical devices using thin film GaAs. The materials studies concern scientific aspects of crystal preparation and the properties of crystals of compound semiconductors. During the initial phase of the program, there has been significant progress on the preparation of thin films of GaAs using liquid phase epitaxial growth techniques. Initial problems concerning surface morphology and purity have been solved and wafers suitable for device fabrication are now being produced. Studies of device applications are in their initial phases. In the materials studies, the initial activity has concerned the construction of relevant apparatus and the development of specific techniques required to approach each program.