Synthesis of cobalt-oxide nanoparticles embedded in silicon nanotubes via low-energy cobalt implantation

Abstract

Silicon nanotubes (Si NTs) show a unique structure compared to other silicon nanostructures, such as porous silicon, silicon nanoparticles, and silicon nanowires. Si NTs' well-defined structure in terms of silicon shell thickness, inner diameter, and length with a high surface area makes them useful in myriad applications. In this work, we fabricate Si NTs by using ZnO nanowires as templates; the Si NTs have a shell thickness of ∼13 nm, inner diameter of ∼80 nm, and a length in the range of 1–2 μm with embedded Co3O4 nanoparticles (NPs), which are formed by annealing the cobalt ion-implanted Si NTs. The cobalt ion implantation was carried out at 50 keV with a fluence of 7.5 × 1015 ions/cm2. The morphology and composition of the cobalt-NP decorated Si NTs are characterized by using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), transmission electron microscopy (TEM), and x-ray photoemission spectroscopy (XPS). TEM, HRTEM, XPS, and Raman spectroscopy studies confirm the formation of Co3O4 nanoparticles in the NTs. The temperature-dependent zero-field-cooled (ZFC), and field-cooled (FC) magnetization for the Co implanted Si NTs before and after annealing is also measured and shows little magnetic response due to the low concentration of cobalt in the nanotubes. The fabrication process is compatible with the current semiconductor industry methods and may find potential applications in magnetic drug delivery and devices.