Abstract
A dense SiC coating on carbon particles has been developed using SiO powders as the Si source and a chemical vapor reaction method. The coating process was controlled by atmosphere, coating temperature, time, and weight ratio of SiO/C. The SiC‐coated carbon particles, with a mean particle size of 20 μm, were sintered at 2000°C under 40 MPa for 20 min by spark plasma sintering (SPS). The product, called ceramic bonded carbon (CBC), had a unique microstructure, with a 3D micro‐network structure consisting of carbon particles covered with 1~5 μm thick SiC boundary layers. The sintering behavior of SiC/CBCs was analyzed in terms of the network formation of SiC boundary layers at over 1800°C and the grain growth of SiC at 2000°C. SiC/CBCs showed a bending strength of 150 MPa and a low shore hardness of 40. These materials could also be easily joined to SiC ceramics using SPS.
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