Abstract
Semiconductor CdS nanowires have been fabricated by sulfurizing metal Cd that was electrodeposited in the nanochannels of porous anodic alumina template. The obtained CdS nanowires have been characterized using X-ray powder diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and X-ray energy dispersion analysis (EDAX), respectively. Investigation results demonstrate that large-scale polycrystalline CdS nanowires with hexagonal phase structure have been produced, having uniform diameters of about 50 nm and lengths up to tens of microns.
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