Synthesis of c-axis preferred orientation ZnO:Al transparent conductive thin films using a novel solvent method

Abstract

Transparent aluminum doped zinc oxide (ZnO:Al, AZO) conducting thin films with a high-preferential c-axis orientation were synthesized using a new sol–gel formula. The films were deposited using a spin-coating route onto borosilicate glass substrates. We used propylene glycol methyl ether (PGME) as the solvent in place of ethylene glycol monomethyl ether (EGME), which is commonly used because it is easier to deposit onto the substrates. PGME is also superior in terms of health and safety. PGME solvent does not need to settle for several days before use and can be spin-coated as soon as the raw material and solvent are mixed. The effects of this novel solvent on the structural, morphological, electrical and optical properties are discussed using XRD, SEM, a four-point probe and UV–VIS spectrophotometry. It was found that the films produced with PGME showed a high-preferential c-axis orientation and compact microstructure in comparison films produced using EGME. The electrical resistivity of AZO thin films produced with PGME solvent was lowered to 3.474 × 10 − 3 Ω cm after annealing in 95 N 2/5H 2 atmosphere. In addition, the optical transmittances of AZO thin films on glass plates were higher than 90% in the visible wavelength region.