Abstract
We have synthesized c-axis-oriented MgB2 thin films on (1 1̄ 0 2) Al2O3 substrates by using a pulsed laser deposition technique and have measured the longitudinal and the Hall resistivites in the ab-plane direction. The as-grown thin films show Tc of 39.2 K with a sharp transition width of ∼0.15 K. In the normal state, the Hall coefficient (RH) behaves as RH ∼ T with increasing temperature (T) up to 130 K and then deviates from that linear T-dependence at higher temperatures. The T2 dependence of the cotangent of the Hall angle is only observed above 130 K. We estimate the absolute value of the hole density to be about two orders of magnitude higher than that of YBa2Cu3O7.
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