Abstract

ABSTRACTBulk, polycrystalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photoluminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.

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