Abstract
Ion beam sputtering deposition technique was employed to prepare boron carbide (B 4C) films at different substrate temperature. The structure and mechanical properties of the B 4C films have been studied over the substrate temperature range of 50–350°C in order to study the temperature effect. Infrared spectroscopy, Auger electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy were used to evaluate the structural properties. The formation of B 4C was found to strongly depend on the deposition temperature. It was shown that a higher deposition temperature was beneficial for the boron carbide synthesis. Hardness of these films was also thoroughly studied by micro-indentation facility. The hardness increased and reached a very high value of 43 GPa at a substrate temperature of 350°C.
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