Synthesis of Black Phosphorene/P-Rich Transition Metal Phosphide NiP3 Heterostructure and Its Effect on the Stabilization of Black Phosphorene

Abstract

Black phosphorus (BP), as a direct band gap semiconductor material with a two-dimensional layered structure, has a good application potential in many aspects, but the surface state of it is extremely unstable, especially that of single-layer black phosphorus. In this study, BP crystals and two-dimensional black phosphorus (2D BP) are prepared by a mechanical ball-milling–liquid-phase exfoliation method. The X-ray diffraction (XRD) spectrum and high-resolution transmission electron microscopy (HRTEM) results showed that red phosphorus (RP) successfully turned to BP by the mechanical ball-milling method. The spectrophotometric analysis has detected absorption peaks at 780 nm, 915 nm, and 1016 nm, corresponding to single, double, and three-layer BP bandgap emission. A simple solvothermal strategy is designed to synthesize in-plane BP/P-rich transition metal phosphide (TMP) heterostructures (BP/NiP3) by defect/edge-selective growth of NiP3 on the BP nanosheets. HRTEM analysis indicates that the metal ions are preferentially deposited on the defects of 2D BP such as edges and unsaturated sites, forming a 2D BP/NiP3 in-plane heterojunction.