Abstract
Ferroelectric (Bi,Nd)4Ti3O12-based thin films were synthesized by chemical solution deposition. In this study, Ge substitution for the Ti site in (Bi,Nd)4Ti3O12 was studied for the improvement of microstructural and ferroelectric properties of low-temperature-annealed thin films. Bi3.35Nd0.75Ti3-xGexO12 thin films crystallized into the Bi4Ti3O12 phase above 600°C. The surface morphology of Bi3.35Nd0.75Ti3-xGexO12 thin films was greatly improved by optimizing the amount of Ge substitution compared with that of nonsubstituted Bi3.35Nd0.75Ti3O12 films. In addition, the Bi3.35Nd0.75Ti2.9Ge0.1O12 thin films were found to show excellent ferroelectric properties after crystallization even at 600°C.
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