Abstract
Flash memories have found extensive application for use in portable storage devices. They have been used for code storage as well as data storage. The storage density associated with these devices has increased tremendously in the past few years. This has necessitated very dense packing of data bits on the device. This gives rise to increased Raw Bit Error Rate (RBER) as a result of Inter Symbol Interference (ISI) between bits stored in adjacent cells. This necessitates the use of powerful error control codes to guarantee information integrity. With the increase in density of data storage, the raw bit error rate (RBER) associated with the storage device increases. Error Control Coding (ECC) can be used to reduce the RBER to acceptable values so that these devices can be employed to store information in applications where data corruption is unacceptable. In this paper, we describe the synthesis of BCH codes based on memory models proposed by the semiconductor industry. These codes have better error correcting capability than the codes used in current practice.
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