Abstract
Abstract The four-layer Aurivillius CaBi4Ti4O15 with introducing of La3+ on the A-site and Mn3+ on the B-site with the formula Ca1-xBi3+xLaTi4-xMnxO15 (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) were synthesized by molten salt method using the mixture of sulfate salts K2SO4/Na2SO4 as the flux. XRD data confirmed the formation of single-phase Aurivillius with A21am orthorhombic structure for x = 0, 0.2, 0.4, and 0.6, whereas for x = 0.8 and 1, the impurity phases were observed. SEM analysis shows the anisotropic plate-like grains, which are a typical grain of Aurivillius phases. The cell volume decreases with increasing x, indicating a presence of mixed valences of Mn3+ and Mn4+. The dielectric constants increased with x, strongly correlated with the higher distortion of the structure, the 6s2 lone pair electrons of Bi3+ cation increase. The presence of Mn3+ unpaired electrons results in the increase of dielectric loss as increasing x.
Highlights
Oxide compounds based on Aurivillius phase have received much attention in recent years due to their sufficiently good dielectric properties and high ferroelectric– paraelectric phase transition temperature, which can be applied as memory cells, capacitors, sensors, and hightemperature piezoelectric transducers, etc[1,2,3]
Several magnetoelectric materials based on Aurivillius phase have been reported for formula Pb1-2xBi1.5+2xLa0.5Nb2-xMnxO9, Pb1-xBi4+xTi4-xMnxO15, Pb2-xBi4+xTi5-xMnxO18, and exhibited the improvement in dielectric properties[8,9,10]
The substitution of Mn3+ on the B-site cation up to 15% molar ratio has been reported in our previous reports both for four-layer Aurivillius Pb1-xBi4+xTi4-xMnxO15 and double‐layer Aurivillius Pb1-2xBi1.5+2xLa0.5Nb2-xMnxO9 synthesized by the molten salt method[8,9]
Summary
Oxide compounds based on Aurivillius phase have received much attention in recent years due to their sufficiently good dielectric properties and high ferroelectric– paraelectric phase transition temperature, which can be applied as memory cells, capacitors, sensors, and hightemperature piezoelectric transducers, etc[1,2,3]. The modification of Aurivillius properties by introducing a magnetic transition cation (dn) into the B-site of perovskite layers have received much interest due to this may result in multiferroic properties, which exhibit the coupling of both ferroelectric and magnetic properties[5]. Several magnetoelectric materials based on Aurivillius phase have been reported for formula Pb1-2xBi1.5+2xLa0.5Nb2-xMnxO9, Pb1-xBi4+xTi4-xMnxO15, Pb2-xBi4+xTi5-xMnxO18, and exhibited the improvement in dielectric properties[8,9,10]. Four-layered Aurivillius phase with formula CaBi4Ti4O15 (CBT) has a high Curie temperature (Tc) of ferroelectric
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