Abstract

Amorphous silicon–germanium alloys with 70% Si and 30% Ge have been formed by rapid heating in a pure E-field in a single mode 2.45 GHz microwave cavity. The synthesis of amorphous Si–Ge alloy by all conventional processing is difficult. This polarized microwave process provides another striking example of its unique abilities: producing bulk amorphous Si–Ge alloys. The microwave fabricated amorphous Si0.7Ge0.3 alloy composition exhibited relatively high Seebeck coefficient with high potential of its application in high efficient thermoelectric materials.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.