Abstract
Carbon films were synthesized on a Si wafer by simultaneous application of pulse bias and DC bias by a plasma-based ion implantation system using an electron cyclotron resonance (ECR) plasma source with a mirror field. The relationship between the pulse biasing voltage and the properties of carbon films was investigated. The hardness and tribological properties of the carbon film improved as the pulse bias voltage was decreased from −10 kV to −2 kV. Diamond-like carbon (DLC) films with a low friction coefficient were formed by simultaneous application of a low pulse bias voltage, such as −2 kV, and a DC bias. During the friction test of the DLC film, excellent tribological properties were observed under a high conducted load, such as 20 N, which shows that not only the friction coefficient but also the durability during the friction test was improved. The improvement of the tribological property was attributed to the formation of a mixed layer at the interface between the DLC film and the Si substrate.
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