Abstract
Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris-dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x-ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process.
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