Abstract
Ceramic Al4C3 nanowalls were fabricated through a VS mechanism via a chemical vapor deposition (CVD) method. XRD (X-ray diffraction), Raman spectra, SEM (scanning electron micrograph) and TEM (transmission electron micrograph) methods were employed to characterize the product. The synthesized 2-D nanostructures are confirmed to be polycrystalline R-Al4C3 with a Al2O3 sheath outside the nanosheet. Field emission (FE) measurements show that the turn-on field (where the emission current reaches 10 μA cm−2) of the as-prepared sample is 6.0–7.0 V μm−1. According to several comparative experiments, we propose an atmosphere-controlled nanowall growth mechanism from self-assembling templates under a low-pressure environment to explain the growth process.
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