Abstract
AbstractBis(2‐(oxiran‐2‐ylmethyl)‐1,3‐dioxoisoindolin‐5‐yl) carbonate and polymers containing 9‐anthracenylmethylmethacrylate (AMMA), p‐tert‐butoxy styrene (PTBS), and methacrylic acid (MAA) monomeric units were synthesized with the aim of developing a novel photo‐patternable cross‐linked epoxy system. The oxirane groups in bis(2‐(oxiran‐2‐ylmethyl)‐1,3‐dioxoisoindolin‐5‐yl) carbonate were reacted with the carboxylic acid in the polymer to generate a cross‐linked epoxy film, and the photo degradation of the cross‐linked film was achieved through decomposition of the carbonate groups in the cross‐linked film by deep UV irradiation. Because the copolymer containing anthracene groups has relatively high reflective index and absorption at 248 nm, this cross‐linked system can be applied to patternable bottom antireflective coating materials for deep UV lithography applications. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009
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