Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction under High Pressure

Abstract

Novel ternary nitride semiconductor MgSnN2 was synthesized using the metathesis reaction under high pressure (P = 5.5 GPa/T = 850 °C/1 h). MgSnN2 obtained in this study showed a rocksalt structure, although we have reported that ZnSnN2 synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN2 with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN2 is estimated to be 2.3 eV and it shows a distinct cathodoluminescence peak at room temperature. MgSnN2 can find potential use in photovoltaic absorber, in the emitting layer of a light‐emitting device, and photocatalyst or opaque pigment because the elements composing MgSnN2 are nontoxic and earth‐abundant. MgSnN2 powder synthesized in this study showed excellent crystallinity, proving that metathesis reaction under high pressure is a superior method for synthesizing novel multicomponent nitrides.