Abstract

In the present investigation, we report a simple and new technique to synthesize silicon carbide nanowires by high energy ball milling of silicon and carbon powders followed by annealing at elevated temperatures. The detailed structural analysis was carried out by X-ray diffraction, scanning and transmission electron microscopy, and FT-IR analysis. Nanocrystalline silicon particles were detected to be covered by amorphous carbon after milling. This typical structure was transformed to β-SiC nanowires during annealing by new growth mechanism. The β-SiC nanoparticles were found to be self-assembled one by one and formed a curly chain, and then rotated gradually in accordance to the same crystal orientation along the β-SiC [111] direction.

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