Synthesis, morphology and device characterizations of a new organic semiconductor based on 2,6-diphenylindenofluorene

Abstract

A new organic semiconductor, 2,6-diphenylindenofluorene (DPIF), was synthesized in four steps with a high overall yield of 49.3%. The morphology of thin films of DPIF that were formed under different substrate temperatures was examined by atomic force microscopy and X-ray diffraction analysis. Two different crystalline phases were found to exist depending on the deposition conditions. The DPIF thin film emits around 500–530 nm, while the OLED based on DPIF emits green light with a maximum output over 150 Cd/m2 under 35 V. Two typical transistor devices, thin-film transistor (TFT) and semiconductor-metal-semiconductor (SMS) transistor, were fabricated and characterized. DPIF shows a weak n-type character from the TFT device measurement, while SMS transistors using DPIF as an emitter behave like permeable-base transistors with low operating voltages in both common-base and common-emitter modes and a feature of current amplification. Our results demonstrate however, that further research efforts are necessary in order to prevent the observed instabilities. These are quite important, considering that the common-emitter mode is widely used in applications requiring not only switching capability, but also current amplification.