Synthesis from the liquid phase of bismuth-containing AlGaInAsP solid solutions on InP substrates: Growth kinetics, structural and luminescent properties

Abstract

This paper presents a synthesis from the liquid phase in the field of temperature gradient of bismuth-containing AlGaInAsP solid solutions. Investigations are made of the effect of bismuth on synthesis kinetics of AlGaInAsP solid solution, structural and luminescent properties. Incorporation of bismuth leads to stabilization of the crystallization front of the solid solution and elimination of antisite defects at the “solid solution – substrate” boundary this is demonstrated by X-ray diffraction and secondary ion mass spectroscopy. It was found that bismuth only partially passes from the liquid zone into the solid phase. In our experiments, bismuth fraction of 5 atom% was achieved in AlGaInAsP thin films. It is shown that an increase in bismuth concentration in composition of the solid solution leads to an enhancement of the structural perfection and photoluminescence intensity of AlGaInAsPBi/InP heterostructures.