Synthesis, crystal growth and characterization of piperazinium 5-nitrosalicylate (P5NS) single crystal for nonlinear optical (NLO) applications

Abstract

A single crystal of Piperazinium 5-nitrosalicylate (P5NS) was grown by using slow evaporation solution technique (SEST). The structural analysis (crystal system & cell parameter) of the grown P5NS crystal was examined by single crystal XRD and it exposed that the P5NS crystal has a crystal triclinic system and space group (P-1). Using powder XRD analysis, miller index and (h k l) planes were identified. The P5NS crystal has a sharp cutoff wavelength around 380 nm and is transparent in UV region. The FTIR analysis was investigated on the P5NS crystal to find out the P5NS functional groups. The thermogravimetric and differential thermal analysis illustrate that the P5NS crystal is thermally stable upto 255 °C. Further increase in the temperature resulted in decomposition of P5NS. The etch pit density of P5NS crystal has been calculated by using the chemical etching analysis. The Photoconductivity study reveals that the grown PMC crystal has positive photoconductive nature. The electrical properties, dielectric constant and dielectric loss were determined. The laser damage threshold (LDT) analysis was investigated by Nd: YAG laser and the wavelength of laser is 1064 nm. Intermolecular interactions of P5NS is executed by the Hirshfeld surface analysis. The NLO susceptibility (χ(3)) was calculated by the Z-scan method using the source of He-Ne laser, whose wavelength is 632.8 nm.