Abstract
Bi2O2Te was synthesised from a stoichiometric mixture of Bi, Bi2O3 and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr2Si2 structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16)Å. The electrical and thermal transport properties of Bi2O2Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi2O2Te is an n-type semiconductor, with a band gap of 0.23eV. The thermal conductivity of Bi2O2Te is remarkably low for a crystalline material, with a value of only 0.91Wm−1K−1 at room temperature.
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