Abstract
Electrochemical deposition method has been used to synthesize un- and Zn-doped indium oxide (In2O3) thin films. The results of the diffraction pattern analysis confirmed the presence of In2O3 phase in two crystal structure of cubic and rhombohedral. Scanning electron microscope images show presence of nanorods and with the addition of zinc dopant does not change the shape of In2O3 thin films, but their size (diameter) is firstly reduced and then increased by increasing the amount of dopants. The photoluminescence spectra also show the presence of emission bands in the visible regions, which is because of oxygen vacancies. Moreover, absorption spectrum indicated an absorption edge in the ultraviolet region with a shift to higher wavelength and also a decrease in the intensity of absorption by adding zinc dopant. The photocurrent plots showed that the specimen doped with lower value of zinc concentration has the highest current efficiency with transient behavior after light stimulation.
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