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Abstract
Exploring the possibility to obtain n-type oxide thermoelectrics, the transparent conducting oxide Ga3−xIn5+xSn2O16 (0.3<x<1.6) has been investigated taking into consideration its structural relationships with In2O3 and its much lower indium content, more promising for applications. The absolute value of the Seebeck coefficient decreases almost linearly with x, whereas improvement in the power factor is obtained by increasing the indium content. The figure of merit ZT value reaches about 0.28 at 1000 K for x=0.6. The observed results are explained taking into account the peculiarities of the oxygen-deficient fluorite structure.
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