Abstract
Phase relations in the pseudobinary system ZnO-Ga2O3 were investigated at 1723 K. The homologous phase Ga2O3(ZnO)m was formed in a region 9 ≦ n ≦ 38 for ZnO: Ga2O3 = n: 1, and Ga-doped ZnO (wurtzite structure) was in n ≧ 398. In between the two regions (i.e. 38 < n < 398) a composite of Ga-doped ZnO and the homologous phase Ga2O3(ZnO)mmax (mmax ≈ 38) was formed. Thermoelectric properties of the composite were examined along with Ga-doped ZnO and the homologous phase Ga2O3(ZnO)33. In the composite, the homologous phase appears to be very effective in lowering the thermal conductivity. As a result of a trade-off relationship between the power factor and the thermal resistivity, thermoelectric performance happened to be roughly the same for the composite and Ga-doped ZnO samples.
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