Abstract
Zn1−xMgxO films were deposited on single crystal Si (100) substrates using ultrasonic spray pyrolysis under ambient atmosphere. A strong ultraviolet near-band-edge (NBE) emission was observed in the room temperature photoluminescence (PL) measurement for all the as-grown Zn1−xMgxO films, while the deep-level emission was almost undetectable, suggesting that the obtained Zn1−xMgxO-based films are well close to stoichiometry and of optically high quality. A distinct blue-shift of NBE emission peak from 386 nm to 358 nm was observed as the Mg concentration increases from 0% to 25 %. The photoluminescence spectra as a function of temperature were also investigated to examine the emission mechanism of Zn1−xMgxO films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
