Abstract
As a new atomically layered, two-dimensional material, tin (IV) diselenide (SnSe2) has attracted extensive attention due to its compelling application in electronics and optoelectronics. However, the great challenge of impurities and the preparation of high-quality ultrathin SnSe2 nanoflakes has hindered far-reaching research and SnSe2 practical applications so far. Therefore, a facile chemical vapor deposition (CVD) method is employed to synthesize large-scale ultrathin SnSe2 flakes on mica substrates using SnSe and Se powder as precursors. The structural characteristics and crystalline quality of the product were investigated. Moreover, Raman characterizations indicate that the intensity of A1g peak and Eg peak, and the Raman shift of Eg are associated with the thickness of the SnSe2 nanoflakes. The ultrathin SnSe2 nanoflakes show a strong surface-enhanced Raman spectroscopy (SERS) activity for Rhodamine 6G (R6G) molecules. Theoretical explanations for the enhancement principle based on the chemical enhancement mechanism and charge transfer diagram between R6G and SnSe2 are provided. The results demonstrate that the ultrathin SnSe2 flakes are high-quality single crystal and can be exploited for microanalysis detection and optoelectronic application.
Highlights
Two-dimensional (2D) layered materials have received intensive attention owing to their superior properties in the field of photonics, electronics, and optoelectronics
The ultrathin SnSe2 shows an excellent SERS activity for Rhodamine 6G (R6G), and the enhancement effect is explained by the principle of charge transfer
Ultrathin SnSe2 nanoflakes were synthesized on mica substrates at 600 ◦C with Ar (30 sccm) flows under the pressure of 120 Torr via chemical vapor deposition (CVD) method
Summary
Two-dimensional (2D) layered materials have received intensive attention owing to their superior properties in the field of photonics, electronics, and optoelectronics. The CVD method has been proposed as an important and successful method to synthesize various single-crystalline ultrathin layered 2D materials, such as MoSe2, WSe2, and their heterostructures, due to the advantages of high yield and high crystal quality [33]. Motivated by this, He et al reported the shape evolution of SnSe2 nanoflakes on SiO2/Si substrate via CVD employing Se and SnSe powder as precursors with the thinnest approximately 10 nm [25]. The ultrathin SnSe2 shows an excellent SERS activity for R6G, and the enhancement effect is explained by the principle of charge transfer
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