Abstract
Synthesis and study of complex chalcogenides in the low oxidation state opens unexpected new opportunities of studying some fundamental problems of condensed matter physics. Dichalcogenides of transition metals, i.e., compounds with the general formula MX2, where M is molybdenum, tungsten, rhenium etc., and X is sulphur, selenium or tellurium, are especially interesting. These dichalcogenides find applications in optoelectronic devices, radiophotonics, in laser physics, communication technology, etc. This study contains a survey of literature concerning the synthesis of sulphides of transition elements from different groups of the Periodic table in low oxidation states. A method of direct hightemperature synthesis of ReS2 from source components has been proposed and implemented. The synthesized compound was identified by the X-ray fluorescence, method of photoelectron spectroscopy and IR absorption spectroscopy. We show that rhenium(IV) disulphide crystallizes in CdI2 structural type. X-ray photoelectron spectroscopy shows that rhenium in the oxidation state of four is present. IR spectrum shows that rhenium(IV) disulphide structure in contrast to molybdenum(IV) disulphide is characterized by a greater deformation of the layers forming the crystal structure.
Highlights
Synthesis and study of complex chalcogenides in the low oxidation state opens unexpected new opportunities of studying some fundamental problems of condensed matter physics
This study contains a survey of literature concerning the synthesis of sulphides of transition
The synthesized compound was identified by the X-ray fluorescence, method of photoelectron spectroscopy and IR absorption spectroscopy
Summary
Синтез и исследование халькогенидов переходных элементов в низких степенях окисления открывают широкие перспективы для развития фундаментальных проблем физики конденсированного состояния и создания новых функциональных материалов электронной техники. Dichalcogenides of transition metals, i.e., compounds with the general formula MX2, where M is molybdenum, tungsten, rhenium etc., and X is sulphur, selenium or tellurium, are especially interesting. These dichalcogenides find applications in optoelectronic devices, radiophotonics, in laser physics, communication technology, etc. Халькогениды переходных элементов в низких степенях окисления представляют собой относительно мало исследованный класс соединений. Основным методом синтеза простых халькогенидов переходных элементов в низких степенях окисления является непосредственное взаимодействие порошков металлов с элементарной серой. Цель настоящей работы – синтез дисульфида рения контактным спеканием порошков металлического рения и элементарной серы, а также выявление особенностей строения дисульфида рения в сравнении с дисульфидом молибдена на основе анализа их рентгенофотоэлектронных и колебательных ИК-спектров поглощения
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