Abstract
Low dielectric methylsilsesquioxane (MSQ) film can be synthesized by spin-coating on P–Si (100) wafer. Octamethyl cyclotetrasiloxane (D4) was used as a porosity promotion agent to MSQ film. Seven samples with different treatment were prepared. The dielectric constants of these MSQ films significantly lowered from 3.0 to 2.1. Fourier transform infrared spectroscopy was used to identify the Si–O–Si network structure, Si–O–Si cage structure and other bonds. The change of structure resulted in significant lowering of the dielectric constant (k). The capacitance–voltage (C–V) characteristic by HP4294A was used to determine the dielectric constant. Current–voltage (I–V) measurement by Keithley6517A was used to determine the breakdown electric field.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
