Abstract
Well-aligned single-crystalline zinc oxide (ZnO) and Ga doped ZnO (GZO) NWs (NWs) were successfully fabricated on Au film catalyzed sapphire substrate using vapor-liquid-solid (VLS) method in hot-walled pulsed laser deposition (HW-PLD). The structural and optical properties of Ga doped ZnO NWs have been investigated depending on various concentration of Ga dopants in ZnO NWs. As increasing Ga concentration, stacking faults were observed by using FE-SEM and an exciton bound to a neutral donor (D(0)X) peak was clearly observed by using PL spectra. From the structural and optical properties, the ZnO NWs by doping could be application to electronic and optoelectronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and nano-sensors.
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