Abstract

A methodology for the production of II–VI semiconductor nanocrystallites employing organometallic precursors has been developed. The rapid pyrolysis of reagents in a coordinating solvent provides temporally discrete nucleation. Subsequent controlled growth allows the production of macroscopic quantities of nanocrystallites with consistent structure, surface derivatization and a high degree of monodispersity. The samples produced are structurally characterized with a combination of X-ray and Electron Beam based techniques.

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