Abstract

Due to the attractive optical and electrical properties, van der Waals (vdWs) heterostructures constructed from the different two-dimensional materials have received widespread attention. Here, MoS2/h-BN, MoS2/graphene, WS2/h-BN, and WS2/graphene vdWs heterostructures are successfully prepared by the CVD and wet transfer methods. The distribution, Raman and photoluminescence (PL) spectra of the above prepared heterostructure samples can be respectively observed and tested by optical microscopy and Raman spectrometry, which can be used to study their growth mechanisms and optical properties. Meanwhile, the uniformity and composition distribution of heterostructure films can also be analyzed by the Raman and PL spectra. The internal mechanism of Raman and PL spectral changes can be explained by comparing and analyzing the PL and Raman spectra of the junction and non-junction regions between 2D-2D vdWs heterostructure materials, and the effect of laser power on the optical properties of heterostructure materials can also be analyzed. These heterostructure materials exhibit novel and unique optical characteristics at the stacking or junction, which can provide a reliable experimental basis for the preparation of suitable TMDs heterostructure materials with excellent performance.

Highlights

  • Sci. 2021, 22, 1246. https://doi.org/Nanoscale PN heterostructure research is important as the device size decreases

  • Nanoscale van der Waals (vdWs) heterostructures can be prepared by stacking 2D materials, which can allow studies on some new physical mechanisms, and realize integrated electronic and optoelectronic devices based on various functions of atomic-level flat heterostructures [11,12,13]

  • The morphology of 2D-2D vdWs heterostructure materials can be observed by optical microscopy

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Summary

Introduction

Nanoscale PN heterostructure research is important as the device size decreases. Nanoscale vdWs heterostructures can be prepared by stacking 2D materials, which can allow studies on some new physical mechanisms, and realize integrated electronic and optoelectronic devices based on various functions of atomic-level flat heterostructures [11,12,13]. There are no dangling bonds on the surface of layered materials, so they can be used to design and form various high-quality vdWs heterostructures and novel electronic devices with special functions [23]. The components material selection, layer thickness and the twist angle between layers can greatly enrich the types of vdWs heterostructure materials [26] Their optical and electronic properties can be tuned by adjusting their multiple degrees of freedom, which has shown great application prospects in the fields of optoelectronic devices, energy and catalysis

Optical Micrographs of 2D-2D vdWs Heterostructure Materials
Results of
It can be found by observing
The Characterization of
A Raman spectrum characteristics comparison of WS and WS
Preparation of Graphene and h-BN Materials
The Preparation of WS2 or MoS2 Material
The Test Characterization of Heterojunction Materials
Conclusions
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