Abstract
Single-crystal platelets of BeTe have been obtained in an autoclave synthesis, and crystalline powders of BeSe and BeS have been prepared by reaction of Be metal with H 2Se and H 2S, respectively. Optical absorption measurements on the BeTe platelets gave a bandgap of about 2.7 eV at room temperature. BeTe prepared without intentional doping is a p-type semiconductor. Optical absorption measurements at room temperature on cold-pressed powder specimens indicated that the bandgap of BeSe is in the range of 4–4.5 eV, and that the bandgap of BeS exceeds 5.5 eV.
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