Abstract
Bi nanowires with diameters of 20–200nm, and length of up to more than 80μm were synthesized by a simple solvothermal method. The as-prepared Bi nanowires were characterized by XRD, TEM, SAED and HRTEM. The laser power dependent Raman optical properties of the Bi nanowires were investigated for the first time. The result indicated that two first-order Raman peaks of the as-prepared nanowires are red-shifted 6cm−1 compared with those of bulk Bi crystals after irradiation by laser with above 50% laser power. HRTEM investigations indicated that a Bi/oxide core/shell nanostructure was formed when the nanowires were irradiated by laser with above 50% laser power. A rational explanation for the red-shift of Raman peaks were discussed in detail according to phonon confinement model of an infinite crystal based on HRTEM results.
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