Abstract
Thin films of ZrB 2 and TiB 2 were prepared by r.f. diode sputtering and successfully recrystallized by rapid annealing methods. The properties of the as-deposited and annealed films, which will be described, were evaluated by four-point probe resistivity measurements, Auger electron spectroscopy, Rutherford back- scattering, X-ray diffractometry and transmission and scanning electron microscopy. The resultant annealed thin film resistivities are shown to approach those of the refractory metal silicides; the materials thus appear to be promising candidates for integrated circuit metallization application.
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